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NVMYS3D5N04CTWGN-Channel 40 V 24A (Ta), 102A (Tc) 3.6W (Ta), 68W (Tc) Surface Mount LFPAK4 (5x6)

1:$1.1030

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-NVMYS3-949609
ManufacturerOnsemi
MPN #.NVMYS3D5N04CTWG
Estimated Lead Time14 Weeks
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DatasheetDatasheetNVMYS3D5N04C(PDF)
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In Stock: 2067
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 1.1030
Ext. Price$ 1.1030
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.1030$1.1030
10$0.9030$9.0310
100$0.7020$70.2310
500$0.5960$298.0310
1000$0.4860$485.5630
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberNVMYS3
Continuous Drain Current (ID) @ 25°C24A (Ta), 102A (Tc)
Drain-to-Source Voltage (VDS)40 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)23 nC @ 10 V
GradeAutomotive
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1600 pF @ 25 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation3.6W (Ta), 68W (Tc)
QualificationAEC-Q101
RDS(on) Drain-to-Source On Resistance3.3mOhm @ 50A, 10V
Package Type (Mfr.)LFPAK4 (5x6)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3.5V @ 60µA
Package / CaseSOT-1023, 4-LFPAK
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
NVMYS3D5N04C
Environmental Information
Material Declaration NVMYS3D5N04CTWGonsemi REACHonsemi RoHS
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The NVMYS3D5N04CTWG is an N-Channel MOSFET manufactured by Onsemi, designed for automotive applications. It has a voltage rating of 40 V and can handle a continuous current of 24A under ambient conditions (Ta) and 102A when mounted on a suitable heat sink (Tc). The power dissipation capacity is rated at 3.6W for free air conditions and 68W with proper thermal management. This MOSFET is housed in a surface-mount LFPAK4 package, measuring 5x6 mm, and has a gate-to-source voltage limit of ±20V, contributing to its robust performance in various electronic circuits.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.