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NVMYS3D3N06CLTWGN-Channel 60 V 26A (Ta), 133A (Tc) 3.9W (Ta), 100W (Tc) Surface Mount LFPAK4 (5x6)

1:$1.3160

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-NVMYS3-939391
ManufacturerOnsemi
MPN #.NVMYS3D3N06CLTWG
Estimated Lead Time14 Weeks
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DatasheetDatasheetNVMYS3D3N06CL(PDF)
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In Stock: 4165
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 15, 2024
* Quantity
Unit Price$ 1.3160
Ext. Price$ 1.3160
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.3160$1.3160
10$1.0970$10.9650
100$0.8730$87.3380
500$0.7380$369.2190
1000$0.6270$626.8750
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberNVMYS3
Continuous Drain Current (ID) @ 25°C26A (Ta), 133A (Tc)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)40.7 nC @ 10 V
GradeAutomotive
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2880 pF @ 25 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation3.9W (Ta), 100W (Tc)
QualificationAEC-Q101
RDS(on) Drain-to-Source On Resistance3mOhm @ 50A, 10V
Package Type (Mfr.)LFPAK4 (5x6)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2V @ 250µA
Package / CaseSOT-1023, 4-LFPAK
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
NVMYS3D3N06CL
Environmental Information
onsemi RoHS
PCN Other
Mult DEV Product Bulletin 12/Jun/2024
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The NVMYS3D3N06CLTWG, manufactured by Onsemi, is an N-Channel MOSFET designed for high performance in power switching applications. It features a maximum drain-source voltage of 60V and a continuous drain current capacity of up to 26A when in free air (Ta) and 133A with optimal heat dissipation on a case (Tc). The device can handle power dissipation of 3.9W in free air and up to 100W on a case. It is housed in a compact, surface-mountable LFPAK4 package, measuring 5x6 mm. With a gate threshold voltage of 4.5V and 10V, the MOSFET exhibits an input capacitance of 2880 pF at 25V and supports a maximum gate-source voltage of ±20V.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.