NVMYS010N04CLTWGN-Channel 40 V 14A (Ta), 38A (Tc) 3.8W (Ta), 28W (Tc) Surface Mount LFPAK4 (5x6)
1:$0.8040
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ABRmicro #.ABR2045-NVMYS0-997167
ManufacturerOnsemi
MPN #.NVMYS010N04CLTWG
Estimated Lead Time14 Weeks
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Datasheet
NVMYS010N04CL(PDF)
NVMYS010N04CL(PDF)
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Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 0.8040
Ext. Price$ 0.8040
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.8040$0.8040
10$0.6960$6.9590
100$0.4820$48.2380
500$0.4040$201.8750
1000$0.3430$343.1880
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Related Parts
Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberNVMYS010
Continuous Drain Current (ID) @ 25°C14A (Ta), 38A (Tc)
Drain-to-Source Voltage (VDS)40 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)7.3 nC @ 10 V
GradeAutomotive
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)570 pF @ 25 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation3.8W (Ta), 28W (Tc)
QualificationAEC-Q101
RDS(on) Drain-to-Source On Resistance10.3mOhm @ 20A, 10V
Package Type (Mfr.)LFPAK4 (5x6)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2V @ 20µA
Package / CaseSOT-1023, 4-LFPAK
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Datasheets
Environmental Information
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The Onsemi NVMYS010N04CLTWG is an N-Channel MOSFET with a maximum voltage rating of 40 V. It can handle currents up to 14A when considering thermal limitations at ambient temperature (Ta) and up to 38A at case temperature (Tc). In terms of power dissipation, it can manage up to 3.8W at Ta and 28W at Tc. This component is housed in a compact LFPAK4 (5x6) surface-mount package, which supports efficient thermal management. It features a gate charge of 7.3 nC when driven by a 10 V gate-source voltage and has a low on-resistance of 10.3 mOhm when conducting a 20A current at a gate-source voltage of 10V, suitable for demanding automotive environments.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.