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NVMFSC0D9N04CLN-Channel 40 V 50A (Ta), 316A (Tc) 4.1W (Ta), 166W (Tc) Surface Mount 8-DFN (5x6.15)
1:$4.4950
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ABRmicro #.ABR2045-NVMFSC-1009338
ManufacturerOnsemi
MPN #.NVMFSC0D9N04CL
Estimated Lead Time15 Weeks
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DatasheetNVMFSC0D9N04CL(PDF)
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In Stock: 2100
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 4.4950
Ext. Price$ 4.4950
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$4.4950$4.4950
10$3.7770$37.7720
100$3.0560$305.5750
500$2.7170$1358.4060
1000$2.3260$2325.8130
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberNVMFSC0
Continuous Drain Current (ID) @ 25°C50A (Ta), 316A (Tc)
Drain-to-Source Voltage (VDS)40 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)86 nC @ 10 V
GradeAutomotive
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)6100 pF @ 25 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation4.1W (Ta), 166W (Tc)
QualificationAEC-Q101
RDS(on) Drain-to-Source On Resistance0.87mOhm @ 50A, 10V
Package Type (Mfr.)8-DFN (5x6.15)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3.5V @ 250µA
Package / Case8-PowerVDFN
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Datasheets
Environmental Information
PCN Design/Specification
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The NVMFSC0D9N04CL is an N-Channel MOSFET manufactured by Onsemi, featuring a 40V voltage rating and a current capability of 50A at ambient temperature (Ta) and up to 316A at case temperature (Tc). It offers power dissipation of 4.1W in free air and 166W when mounted properly on a heat-sinking surface. This semiconductor device is housed in an 8-DFN package with dimensions of 5x6.15 mm, making it suitable for surface mounting. It operates with a gate-source voltage of 10V and can tolerate gate-source voltages up to ±20V. The MOSFET is designed for efficient power management in high-current applications.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.