The NVMFS6H801NWFT1G is a high-performance N-Channel MOSFET manufactured by Onsemi. It is capable of handling a maximum of 80 V and features a continuous drain current of 23A at a standard ambient temperature (Ta) and 157A with an optimal case temperature (Tc). The part is designed for efficient operation with power dissipation ratings of 3.8W and 166W for these respective conditions. The device is packaged in a compact surface mount design, specifically a 5-DFNW (4.9x5.9) package that includes a wettable flank feature for enhanced solder joint inspection. With a gate charge of 64 nC at 10 V and an input capacitance of 4120 pF at 40 V, the MOSFET is suited for various switching duties. It additionally withstands a gate-source voltage of ±20V, providing robust performance in electrically demanding environments.