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NVMFS5C682NLAFT3GN-Channel 60 V 8.8A (Ta), 25A (Tc) 3.5W (Ta), 28W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
1:$0.3770
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ABRmicro #.ABR2045-NVMFS5-952016
ManufacturerOnsemi
MPN #.NVMFS5C682NLAFT3G
Estimated Lead Time-
SampleGet Free Sample
DatasheetNVMFS5C682NL(PDF)
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In Stock: 128
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 0.3770
Ext. Price$ 0.3770
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
5000$0.3770$1885.9380
10000$0.3600$3601.8750
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusNRND(Not Recommended for New Designs)
Base Product NumberNVMFS5
Continuous Drain Current (ID) @ 25°C8.8A (Ta), 25A (Tc)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)5 nC @ 10 V
GradeAutomotive
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)410 pF @ 25 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation3.5W (Ta), 28W (Tc)
QualificationAEC-Q101
RDS(on) Drain-to-Source On Resistance21mOhm @ 10A, 10V
Package Type (Mfr.)5-DFN (5x6) (8-SOFL)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2V @ 16µA
Package / Case8-PowerTDFN, 5 Leads
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Datasheets
Environmental Information
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The NVMFS5C682NLAFT3G is an N-Channel MOSFET manufactured by Onsemi. It is designed for surface mount applications, featuring a 5-DFN (5x6) package with an 8-SOFL configuration. The MOSFET operates at a maximum voltage of 60 V and can handle continuous currents of up to 8.8A when used in ambient conditions (Ta) or up to 25A with adequate thermal management (Tc). It provides a power dissipation capability of 3.5W in free air and 28W when mounted on a thermal conductive surface. The part also supports a gate-source voltage of ±20V, making it suitable for various uses within the automotive sector.
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