NVMFS5C638NLWFT1GN-Channel 60 V 26A (Ta), 133A (Tc) 4W (Ta), 100W (Tc) Surface Mount, Wettable Flank 5-DFNW (4.9x5.9) (8-SOFL-WF)
1:$2.5480
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ABRmicro #.ABR2045-NVMFS5-1006405
ManufacturerOnsemi
MPN #.NVMFS5C638NLWFT1G
Estimated Lead Time29 Weeks
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Datasheet
NVMFS5C638NL(PDF)
NVMFS5C638NL(PDF)
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Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 2.5480
Ext. Price$ 2.5480
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$2.5480$2.5480
10$2.1390$21.3880
100$1.7310$173.0810
500$1.5390$769.2500
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Related Parts
Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberNVMFS5
Continuous Drain Current (ID) @ 25°C26A (Ta), 133A (Tc)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)40.7 nC @ 10 V
GradeAutomotive
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2880 pF @ 25 V
Mfronsemi
Mounting StyleSurface Mount, Wettable Flank
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation4W (Ta), 100W (Tc)
QualificationAEC-Q101
RDS(on) Drain-to-Source On Resistance3mOhm @ 50A, 10V
Package Type (Mfr.)5-DFNW (4.9x5.9) (8-SOFL-WF)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2V @ 250µA
Package / Case8-PowerTDFN, 5 Leads
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Datasheets
Environmental Information
PCN Assembly/Origin
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The NVMFS5C638NLWFT1G is an N-Channel MOSFET produced by Onsemi, designed for efficiency in power management systems. It is capable of handling a voltage of 60 V and operates with a drain current of up to 26A in ambient conditions (Ta) and 133A with a controlled case (Tc). The power dissipation capacity of this MOSFET is rated at 4W in ambient conditions and can reach up to 100W with proper case management. This surface-mount device features a wettable flank in a 5-DFNW package, which measures 4.9x5.9 mm, providing convenience for automated optical inspection. The device has an input capacitance of 2880 pF at 25 V and supports a gate-source voltage of ±20V, with a threshold voltage of 2V at 250µA.
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