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NVMFS5C604NLWFT3GN-Channel 60 V 40A (Ta), 287A (Tc) 3.9W (Ta), 200W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)

1:$1.2940

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ABRmicro #.ABR2045-NVMFS5-1040081
ManufacturerOnsemi
MPN #.NVMFS5C604NLWFT3G
Estimated Lead Time-
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In Stock: 7
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 17, 2024
* Quantity
Unit Price$ 1.2940
Ext. Price$ 1.2940
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Price Gradients
Qty.Unit PriceExt. Price
5000$1.2940$6470.6250
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusEnd of Life (EOL)
Base Product NumberNVMFS5
Continuous Drain Current (ID) @ 25°C40A (Ta), 287A (Tc)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)120 nC @ 10 V
GradeAutomotive
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)8900 pF @ 25 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation3.9W (Ta), 200W (Tc)
QualificationAEC-Q101
RDS(on) Drain-to-Source On Resistance1.2mOhm @ 50A, 10V
Package Type (Mfr.)5-DFN (5x6) (8-SOFL)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2V @ 250µA
Package / Case8-PowerTDFN, 5 Leads
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Datasheets
PCN Assembly/Origin
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The NVMFS5C604NLWFT3G is an N-Channel MOSFET manufactured by Onsemi, designed for efficient surface mount applications with a 5-DFN (5x6) package. This component is capable of handling a maximum voltage of 60 V and a current of up to 40A in a free air environment (Ta) or 287A when properly heat sunk (Tc). It features a power dissipation of 3.9W in free air and up to 200W with appropriate thermal management. The device offers a gate charge of 120 nC at 10 V and a capacitance of 8900 pF at 25 V, indicating its suitability for various switching applications, while balancing performance and thermal efficiency within its compact form factor.
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