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NVMFS5C456NT1GN-Channel 40 V 20A (Ta), 80A (Tc) 3.6W (Ta), 55W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)

1:$1.3260

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-NVMFS5-1029806
ManufacturerOnsemi
MPN #.NVMFS5C456NT1G
Estimated Lead Time7 Weeks
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In Stock: 1400
Shipped From Shenzhen or Hong Kong Warehouses
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Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 17, 2024
* Quantity
Unit Price$ 1.3260
Ext. Price$ 1.3260
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.3260$1.3260
10$1.0850$10.8480
100$0.8440$84.3630
500$0.7150$357.5310
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberNVMFS5
Continuous Drain Current (ID) @ 25°C20A (Ta), 80A (Tc)
Drain-to-Source Voltage (VDS)40 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)18 nC @ 10 V
GradeAutomotive
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1150 pF @ 25 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation3.6W (Ta), 55W (Tc)
QualificationAEC-Q101
RDS(on) Drain-to-Source On Resistance4.5mOhm @ 35A, 10V
Package Type (Mfr.)5-DFN (5x6) (8-SOFL)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3.5V @ 250µA
Package / Case8-PowerTDFN, 5 Leads
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The NVMFS5C456NT1G is an N-Channel MOSFET manufactured by Onsemi, designed for efficient power management in electronic devices. It can handle a voltage of up to 40V and a current of 20A under ambient conditions (Ta) and 80A when mounted on a thermally conducive surface (Tc). The MOSFET dissipates up to 3.6W in free air (Ta) and 55W with a properly implemented cooling solution (Tc). Encased in a 5-DFN (5x6) package, which corresponds to an 8-lead SOFL (Small Outline Flat Lead), it offers a compact footprint for surface mounting applications. Additionally, the part has a gate-to-source voltage tolerance of ±20V, with a gate threshold voltage of 3.5V specified at a drain current of 250µA, and operates effectively with a gate drive voltage of 10V.
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