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NVMFS5C442NAFT3GN-Channel 40 V 29A (Ta), 140A (Tc) 3.7W (Ta), 83W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)

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ABRmicro #.ABR2045-NVMFS5-1020918
ManufacturerOnsemi
MPN #.NVMFS5C442NAFT3G
Estimated Lead Time-
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DatasheetDatasheetNVMFS5C442N(PDF)
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In Stock: 41
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 16, 2024
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusActive
Base Product NumberNVMFS5
Continuous Drain Current (ID) @ 25°C29A (Ta), 140A (Tc)
Drain-to-Source Voltage (VDS)40 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)32 nC @ 10 V
GradeAutomotive
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2100 pF @ 25 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation3.7W (Ta), 83W (Tc)
QualificationAEC-Q101
RDS(on) Drain-to-Source On Resistance2.3mOhm @ 50A, 10V
Package Type (Mfr.)5-DFN (5x6) (8-SOFL)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / Case8-PowerTDFN, 5 Leads
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
NVMFS5C442N
Environmental Information
Material Declaration NVMFS5C442NAFT3Gonsemi REACHonsemi RoHS
PCN Assembly/Origin
Mult Dev Wafer Fab Chg 8/Jan/2021
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The NVMFS5C442NAFT3G is an N-channel MOSFET manufactured by Onsemi, designed for surface mount applications. It features a maximum voltage rating of 40V and can handle a current of up to 140A when mounted on a proper heatsink (Tc) and 29A without (Ta), while dissipating 83W of power in the former condition and 3.7W in the latter. Packaged in a 5-DFN (5x6) configuration, it offers a total gate charge of 32 nC at 10V and can tolerate gate-source voltages of ±20V, making it suitable for various electronic designs where efficient power switching is necessary.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.