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NVMFS5C410NWFT3GN-Channel 40 V 300A (Tc) 3.9W (Ta), 166W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
1:$0.8130
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ABRmicro #.ABR2045-NVMFS5-960222
ManufacturerOnsemi
MPN #.NVMFS5C410NWFT3G
Estimated Lead Time-
SampleGet Free Sample
DatasheetNVMFS5C410N(PDF)
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In Stock: 6
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 0.8130
Ext. Price$ 0.8130
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
5000$0.8130$4064.0630
10000$0.7850$7851.8750
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusEnd of Life (EOL)
Base Product NumberNVMFS5
Continuous Drain Current (ID) @ 25°C300A (Tc)
Drain-to-Source Voltage (VDS)40 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)86 nC @ 10 V
GradeAutomotive
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)6100 pF @ 25 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation3.9W (Ta), 166W (Tc)
QualificationAEC-Q101
RDS(on) Drain-to-Source On Resistance0.92mOhm @ 50A, 10V
Package Type (Mfr.)5-DFN (5x6) (8-SOFL)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3.5V @ 250µA
Package / Case8-PowerTDFN, 5 Leads
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Datasheets
Environmental Information
PCN Assembly/Origin
PCN Obsolescence/ EOL
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The NVMFS5C410NWFT3G is a surface-mount N-Channel MOSFET manufactured by Onsemi, housed in a 5-DFN (5x6) package. It is designed to handle a maximum voltage of 40V and a continuous drain current of 300A at its case temperature. The device operates with a low on-resistance of 0.92 milliohms when driven at 10V and 50A, contributing to efficient power management in electronic circuits. Additionally, it features a gate charge of 6100 pF at 25V, allowing for fast switching capabilities. The MOSFET supports a power dissipation of up to 3.9W at ambient temperature and 166W when mounted on a suitable heat sink at case temperature.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.