The NVGS5120PT1G is a P-Channel MOSFET manufactured by Onsemi, designed for compact, surface mount technology with its 6-pin TSOP packaging. This semiconductor component operates with a maximum drain-source voltage of 60 volts and can handle a continuous drain current of 1.8 amperes at room temperature. It features an on-resistance of 111 milliohms at a drain current of 2.9 amperes, making it efficient for low power dissipation applications. The device also supports a gate-source voltage of ±20 volts, providing robustness in various electrical environments. With a power dissipation capability of 600 milliwatts, this MOSFET is suited for applications requiring effective switching performance in a minimal footprint.