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NVF3055-100T1GN-Channel 60 V 3A (Ta) 1.3W (Ta) Surface Mount SOT-223 (TO-261)

1:$0.7270

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ABRmicro #.ABR2045-NVF305-1048228
ManufacturerOnsemi
MPN #.NVF3055-100T1G
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheetNTF3055−100, NVF3055−100(PDF)
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In Stock: 58
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 17, 2024
* Quantity
Unit Price$ 0.7270
Ext. Price$ 0.7270
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* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberNVF3055
Continuous Drain Current (ID) @ 25°C3A (Ta)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)22 nC @ 10 V
GradeAutomotive
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)455 pF @ 25 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation1.3W (Ta)
QualificationAEC-Q101
RDS(on) Drain-to-Source On Resistance110mOhm @ 1.5A, 10V
Package Type (Mfr.)SOT-223 (TO-261)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-261-4, TO-261AA
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
NTF3055−100, NVF3055−100
Environmental Information
Material Declaration NVF3055-100T1Gonsemi REACHonsemi RoHS
PCN Packaging
Covering Tape/Material Chg 20/May/2016
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The NVF3055-100T1G is an N-Channel MOSFET manufactured by Onsemi, designed for surface mounting in electronic circuits. It operates with a drain-source voltage of up to 60 V and supports a continuous current of 3 A when mounted on a suitable heat sink, with a power dissipation of 1.3 W. Packaged in a compact SOT-223 (TO-261) form factor, this MOSFET is well-suited for applications requiring efficient switching performance. It features a gate charge of 22 nC when driven at 10 V and has a gate-source voltage tolerance of ±20V, which enables robust operation in various environments.
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