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NVF2201NT1GN-Channel 20 V 300mA (Ta) 150mW (Ta) Surface Mount SC-70-3 (SOT323)
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ABRmicro #.ABR2045-NVF220-971325
ManufacturerOnsemi
MPN #.NVF2201NT1G
Estimated Lead Time-
SampleGet Free Sample
DatasheetMMBF2201NT1(PDF)
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusObsolete
Base Product NumberNVF220
Continuous Drain Current (ID) @ 25°C300mA (Ta)
Drain-to-Source Voltage (VDS)20 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
GradeAutomotive
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)45 pF @ 5 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation150mW (Ta)
QualificationAEC-Q101
RDS(on) Drain-to-Source On Resistance1Ohm @ 300mA, 10V
Package Type (Mfr.)SC-70-3 (SOT323)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.4V @ 250µA
Package / CaseSC-70, SOT-323
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PCN Design/Specification
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Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.21.0095 (Other; No import duty applies)
Additional Details
The NVF2201NT1G is a compact surface mount N-Channel MOSFET manufactured by Onsemi. It is designed to operate at a maximum drain-source voltage of 20 V and can handle a continuous drain current of 300 mA at ambient temperature. With a power dissipation of 150 mW, it features a low gate threshold voltage of 2.4 V at a gate current of 250 µA. The device is housed in a small SC-70-3 (SOT-323) package, which makes it suitable for space-constrained electronic applications. The MOSFET supports ±20V VGS limits and provides efficient operation at gate-source voltages of 4.5V and 10V.
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