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NVD5C478NLT4GN-Channel 40 V 14A (Ta), 45A (Tc) 3W (Ta), 30W (Tc) Surface Mount DPAK

1:$1.4110

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ABRmicro #.ABR2045-NVD5C4-951140
ManufacturerOnsemi
MPN #.NVD5C478NLT4G
Estimated Lead Time24 Weeks
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DatasheetDatasheetNVD5C478NL(PDF)
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In Stock: 4332
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 1.4110
Ext. Price$ 1.4110
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.4110$1.4110
10$1.1700$11.6980
100$0.9310$93.0750
500$0.7870$393.6560
1000$0.6680$668.3130
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberNVD5C478
Continuous Drain Current (ID) @ 25°C14A (Ta), 45A (Tc)
Drain-to-Source Voltage (VDS)40 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)20 nC @ 10 V
GradeAutomotive
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1100 pF @ 25 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation3W (Ta), 30W (Tc)
QualificationAEC-Q101
RDS(on) Drain-to-Source On Resistance7.7mOhm @ 15A, 10V
Package Type (Mfr.)DPAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.2V @ 30µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
NVD5C478NL
Environmental Information
Material Declaration NVD5C478NLT4Gonsemi REACHonsemi RoHS
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The NVD5C478NLT4G is an N-Channel MOSFET manufactured by Onsemi, designed for effective power management applications. It operates with a voltage capacity of 40V and supports a current of up to 14A in free air (Ta) and 45A with a proper thermal connection (Tc). The power dissipation is rated at 3W for free air and up to 30W with appropriate heatsinking. Housed in a Surface Mount DPAK package, this MOSFET is suitable for compact designs, facilitating easy integration into circuit boards. It features a gate-source voltage of 4.5V and 10V, with a gate charge of 20 nC at 10V, indicating its efficiency in switching operations.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.