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NVD5C434NT4GN-Channel 40 V 163A (Tc) 117W (Tc) Surface Mount DPAK

1:$2.9060

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ABRmicro #.ABR2045-NVD5C4-926730
ManufacturerOnsemi
MPN #.NVD5C434NT4G
Estimated Lead Time24 Weeks
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DatasheetDatasheetNVD5C434N(PDF)
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In Stock: 1519
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 15, 2024
* Quantity
Unit Price$ 2.9060
Ext. Price$ 2.9060
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$2.9060$2.9060
10$2.4420$24.4160
100$1.9740$197.4130
500$1.7550$877.6250
1000$1.5030$1503.4380
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberNVD5C434
Continuous Drain Current (ID) @ 25°C163A (Tc)
Drain-to-Source Voltage (VDS)40 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)80.6 nC @ 10 V
GradeAutomotive
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)5400 pF @ 25 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation117W (Tc)
QualificationAEC-Q101
RDS(on) Drain-to-Source On Resistance2.1mOhm @ 50A, 10V
Package Type (Mfr.)DPAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
NVD5C434N
Environmental Information
Material Declaration NVD5C434NT4Gonsemi REACHonsemi RoHS
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The NVD5C434NT4G by Onsemi is a surface-mount N-Channel MOSFET housed in a DPAK package. It is designed to handle a continuous drain current of up to 163A and a maximum power dissipation of 117W, both measured at the case temperature. With a drain-source voltage rating of 40V and a gate-source voltage of ±20V, this MOSFET is suitable for high-current switching applications. It has a typical gate charge of 80.6 nC at 10V, indicating its efficiency in fast switching operations.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.