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NVD5805NT4GN-Channel 40 V 51A (Tc) 47W (Tc) Surface Mount DPAK

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ABRmicro #.ABR2045-NVD580-993722
ManufacturerOnsemi
MPN #.NVD5805NT4G
Estimated Lead Time-
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DatasheetDatasheetN(T,V)D5805N(PDF)
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In Stock: 3
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 16, 2024
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberNVD580
Continuous Drain Current (ID) @ 25°C51A (Tc)
Drain-to-Source Voltage (VDS)40 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)80 nC @ 10 V
GradeAutomotive
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1725 pF @ 25 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation47W (Tc)
QualificationAEC-Q101
RDS(on) Drain-to-Source On Resistance9.5mOhm @ 15A, 10V
Package Type (Mfr.)DPAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3.5V @ 250µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
N(T,V)D5805N
Environmental Information
Material Declaration NVD5805NT4Gonsemi REACHonsemi RoHS
PCN Assembly/Origin
G700HC to G700HF 24/Oct/2016
PCN Design/Specification
Mold Compound Revision 24/Apr/2015Mold Compound Update 25/Feb/2015
PCN Obsolescence/ EOL
Mult Dev EOL 24/Jul/2019Mult Dev Eol 12/Jul/2018Reactivation 29/Aug/2018
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The NVD5805NT4G is an N-Channel MOSFET manufactured by Onsemi, designed for use in power management applications. It operates with a drain-source voltage of 40 volts and can handle a continuous current of up to 51 amperes when appropriately cooled. Housed in a surface-mount DPAK package, it offers a low on-state resistance of 9.5 milliohms at a gate-source voltage of 10 volts and a drain current of 15 amperes, ensuring efficient current conduction. With a total power dissipation capacity of 47 watts, this MOSFET is suitable for standard voltage level interfaces, supporting a gate-source voltage tolerance of ±20 volts.
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