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NVD4804NT4GN-Channel 30 V 14.5A (Ta), 124A (Tc) 1.43W (Ta), 107W (Tc) Surface Mount DPAK

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ABRmicro #.ABR2045-NVD480-984204
ManufacturerOnsemi
MPN #.NVD4804NT4G
Estimated Lead Time-
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DatasheetDatasheetNTD4804N(PDF)
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In Stock: 13
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 16, 2024
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberNVD480
Continuous Drain Current (ID) @ 25°C14.5A (Ta), 124A (Tc)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 11.5V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)40 nC @ 4.5 V
GradeAutomotive
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)4490 pF @ 12 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation1.43W (Ta), 107W (Tc)
QualificationAEC-Q101
RDS(on) Drain-to-Source On Resistance4mOhm @ 30A, 11.5V
Package Type (Mfr.)DPAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.5V @ 250µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
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Extended Links
Datasheets
NTD4804N
Environmental Information
Material Declaration NVD4804NT4Gonsemi REACHonsemi RoHS
PCN Assembly/Origin
DPAK Device Assembly Site Add 3/Oct/2016
PCN Design/Specification
Mold Compound Revision 24/Apr/2015Mold Compound Update 25/Feb/2015
PCN Obsolescence/ EOL
AP0201/FDD/NJVM/NSV/NVD/NVT/SNS 30/Jun/2022Mult Dev EOL 24/Jul/2019Reactivation 29/Aug/2018
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The NVD4804NT4G is an N-Channel MOSFET manufactured by Onsemi, optimized for surface mount applications with a DPAK package. It is capable of handling a continuous current of 14.5A when measured at ambient temperature (Ta) and up to 124A when attached to a suitable heatsink (Tc). The power dissipation is rated at 1.43W in ambient temperature conditions and can reach up to 107W with adequate thermal management. Featuring a low on-resistance of 4 mOhm at 30A and 11.5V, it also has a threshold voltage of 2.5V at a gate current of 250µA. The MOSFET supports a maximum gate-to-source voltage of ±20V, making it suitable for a variety of power management tasks within its specified ratings.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.