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NVD2955T4GP-Channel 60 V 12A (Ta) 55W (Ta) Surface Mount DPAK

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ABRmicro #.ABR2045-NVD295-942291
ManufacturerOnsemi
MPN #.NVD2955T4G
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheetNTD2955, NVD2955(PDF)
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In Stock: 13
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusObsolete
Base Product NumberNVD295
Continuous Drain Current (ID) @ 25°C12A (Ta)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)30 nC @ 10 V
GradeAutomotive
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)750 pF @ 25 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation55W (Ta)
QualificationAEC-Q101
RDS(on) Drain-to-Source On Resistance180mOhm @ 6A, 10V
Package Type (Mfr.)DPAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
NTD2955, NVD2955
Environmental Information
Material Declaration NVD2955T4Gonsemi REACHonsemi RoHS
PCN Obsolescence/ EOL
Mult Dev EOL 24/Jul/2019
PCN Packaging
MPN Label Update 08/Sep/2021MPN label update 11/Oct/2021
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The NVD2955T4G by Onsemi is a P-Channel MOSFET designed for efficient electronic switching and amplification. It supports a drain-source voltage of up to 60V and can handle a current of 12A under specified conditions. Encased in a surface-mount DPAK package, this component offers a power dissipation capacity of 55W at ambient temperatures. It features a low on-resistance of 180mOhm at 6A and a gate-source voltage threshold of 10V, making it suitable for a variety of circuit design demands.
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