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NVC3S5A51PLZT1GP-Channel 60 V 1.8A (Ta) 1.2W (Ta) Surface Mount 3-CPH

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ABRmicro #.ABR2045-NVC3S5-1034851
ManufacturerOnsemi
MPN #.NVC3S5A51PLZT1G
Estimated Lead Time-
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DatasheetDatasheetNVC3S5A51PLZ(PDF)
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In Stock: 5
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 17, 2024
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusObsolete
Base Product NumberNVC3S5
Continuous Drain Current (ID) @ 25°C1.8A (Ta)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4V, 10V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)6 nC @ 10 V
GradeAutomotive
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)262 pF @ 20 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation1.2W (Ta)
QualificationAEC-Q101
RDS(on) Drain-to-Source On Resistance250mOhm @ 1A, 10V
Package Type (Mfr.)3-CPH
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.6V @ 1mA
Package / CaseTO-236-3, SC-59, SOT-23-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
NVC3S5A51PLZ
Environmental Information
Material Declaration NVC3S5A51PLZT1Gonsemi RoHS
PCN Obsolescence/ EOL
Mult Dev EOL 7/Apr/2021
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The NVC3S5A51PLZT1G is a P-Channel MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) manufactured by Onsemi. It is designed for surface mount applications and features a maximum voltage rating of 60 V and a current rating of 1.8A when operating at ambient temperature (Ta). The device has a power dissipation capability of 1.2W at ambient temperature, with gate-source voltage tolerance up to ±20V. It is housed in a compact 3-CPH package, optimized for compact spaces, and is characterized by threshold voltages of 4V and 10V.
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