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NTZS3151PT5GP-Channel 20 V 860mA (Ta) 170mW (Ta) Surface Mount SOT-563

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ABRmicro #.ABR2045-NTZS31-1018355
ManufacturerOnsemi
MPN #.NTZS3151PT5G
Estimated Lead Time-
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In Stock: 3
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 16, 2024
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberNTZS3151
Continuous Drain Current (ID) @ 25°C860mA (Ta)
Drain-to-Source Voltage (VDS)20 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))1.8V, 4.5V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)5.6 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)458 pF @ 16 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation170mW (Ta)
RDS(on) Drain-to-Source On Resistance150mOhm @ 950mA, 4.5V
Package Type (Mfr.)SOT-563
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±8V
VGS(th) Gate-to-Source Threshold Voltage (Max.)1V @ 250µA
Package / CaseSOT-563, SOT-666
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Datasheets
Environmental Information
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.21.0095 (Other; No import duty applies)
Additional Details
The NTZS3151PT5G is a P-Channel MOSFET manufactured by Onsemi, designed for surface mount applications with a SOT-563 package. It features a maximum voltage rating of 20 volts and a current capacity of up to 860 milliamps (Ta). The MOSFET has power dissipation of 170 milliwatts (Ta) and operates effectively with gate-source voltages of 1.8V and 4.5V. It exhibits a low on-resistance of 150 milliohms when conducting 950 milliamps at 4.5 volts, making it efficient in minimizing power loss. Additionally, it has an input capacitance of 458 pF at 16 volts, which contributes to its switching characteristics.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.