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NTTS2P03R2GP-Channel 30 V 2.1A (Ta) 600mW (Ta) Surface Mount 8-MSOP

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ABRmicro #.ABR2045-NTTS2P-989570
ManufacturerOnsemi
MPN #.NTTS2P03R2G
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheetNTTS2P03R2(PDF)
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In Stock: 6
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)
Shipping DateNovember 16, 2024
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Lifecycle StatusObsolete
Base Product NumberNTTS2P
Continuous Drain Current (ID) @ 25°C2.1A (Ta)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)22 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)500 pF @ 24 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation600mW (Ta)
RDS(on) Drain-to-Source On Resistance85mOhm @ 2.48A, 10V
Package Type (Mfr.)8-MSOP
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3V @ 250µA
Package / Case8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
NTTS2P03R2
Environmental Information
onsemi REACHonsemi RoHS
PCN Obsolescence/ EOL
Multiple Devices 21/Jan/2010
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.21.0095 (Other; No import duty applies)
Additional Details
The NTTS2P03R2G is a P-Channel MOSFET manufactured by Onsemi, designed for surface mount applications with an 8-MSOP package. It is capable of handling up to 30 V and 2.1 A, with a power dissipation of 600 mW at ambient temperature conditions. The device offers a low on-resistance of 85 milliohms when operating at 2.48 A and 10 V, and features an input capacitance of 500 pF at 24 V, ensuring efficient performance at various voltages. It operates effectively with gate-source voltages of both 4.5V and 10V, making it a versatile component in electronic circuit design.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.