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NTTFS5C460NLTAGN-Channel 19A (Ta), 74A (Tc) Surface Mount 8-WDFN (3.3x3.3)

1:$0.7270

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-NTTFS5-1014675
ManufacturerOnsemi
MPN #.NTTFS5C460NLTAG
Estimated Lead Time16 Weeks
SampleGet Free Sample
DatasheetDatasheetNTTFS5C460NL(PDF)
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In Stock: 1031
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 0.7270
Ext. Price$ 0.7270
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.7270$0.7270
10$0.6320$6.3220
100$0.4380$43.7750
500$0.3660$182.7500
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberNTTFS5
Continuous Drain Current (ID) @ 25°C19A (Ta), 74A (Tc)
FET Feature-
FET TypeN-Channel
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
RDS(on) Drain-to-Source On Resistance4.8mOhm @ 35A, 10V
Package Type (Mfr.)8-WDFN (3.3x3.3)
VGS(th) Gate-to-Source Threshold Voltage (Max.)2V @ 40µA
Package / Case8-PowerWDFN
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
NTTFS5C460NL
Environmental Information
Material Declaration NTTFS5C460NLTAGonsemi REACHonsemi RoHS
PCN Assembly/Origin
Wafer Fab Change 17/Oct/2022
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The NTTFS5C460NLTAG by Onsemi is an N-Channel MOSFET designed for efficient surface mounting, offered in an 8-WDFN package that measures 3.3 x 3.3 mm. It features a low on-resistance of 4.8 milliohms at a current of 35A and a gate-source voltage of 10V, which makes it effective in minimizing power loss. Additionally, the MOSFET has a threshold voltage of 2V at a minimal current of 40µA. The device can handle continuous currents of up to 19A when operating in free air (Ta) and up to 74A with proper thermal management (Tc). This combination of a compact form factor and high current handling makes it suitable for various power management applications.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.