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NTTFS4H05NTAGN-Channel 25 V 22.4A (Ta), 94A (Tc) 2.66W (Ta), 46.3W (Tc) Surface Mount 8-WDFN (3.3x3.3)

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ABRmicro #.ABR2045-NTTFS4-931798
ManufacturerOnsemi
MPN #.NTTFS4H05NTAG
Estimated Lead Time-
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DatasheetDatasheetNTTFS4H05N(PDF)
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In Stock: 17
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 15, 2024
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberNTTFS4
Continuous Drain Current (ID) @ 25°C22.4A (Ta), 94A (Tc)
Drain-to-Source Voltage (VDS)25 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)18.9 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1205 pF @ 12 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature150°C (TJ)
Maximum Power Dissipation2.66W (Ta), 46.3W (Tc)
RDS(on) Drain-to-Source On Resistance3.3mOhm @ 30A, 10V
Package Type (Mfr.)8-WDFN (3.3x3.3)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.1V @ 250µA
Package / Case8-PowerWDFN
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
NTTFS4H05N
Environmental Information
Material Declaration NTTFS4H05NTAGonsemi REACHonsemi RoHS
PCN Obsolescence/ EOL
Mult Dev EOL 01/Oct/2021
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The NTTFS4H05NTAG is an N-Channel MOSFET manufactured by Onsemi, designed for efficient power switching applications. It supports a maximum drain-source voltage of 25 V and can handle continuous currents up to 22.4A when mounted on a PCB (Ta) and up to 94A with proper thermal management (Tc). The device features a power dissipation capability of 2.66W in free air and up to 46.3W with appropriate cooling at the case. Housed in a compact 8-WDFN surface-mount package (measuring 3.3mm x 3.3mm), the MOSFET exhibits a gate charge of 18.9 nC at 10 V and a threshold voltage of 2.1V when a current of 250µA is applied. Additionally, it has an input capacitance of 1205 pF at a 12 V bias.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.