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NTTFS4C25NTWGN-Channel 30 V 5A (Ta), 27A (Tc) 690mW (Ta), 20.2W (Tc) Surface Mount 8-WDFN (3.3x3.3)

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ABRmicro #.ABR2045-NTTFS4-920208
ManufacturerOnsemi
MPN #.NTTFS4C25NTWG
Estimated Lead Time-
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DatasheetDatasheetNTTFS4C25N(PDF)
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In Stock: 13
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 15, 2024
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberNTTFS4
Continuous Drain Current (ID) @ 25°C5A (Ta), 27A (Tc)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)10.3 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)500 pF @ 15 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation690mW (Ta), 20.2W (Tc)
RDS(on) Drain-to-Source On Resistance17mOhm @ 10A, 10V
Package Type (Mfr.)8-WDFN (3.3x3.3)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.2V @ 250µA
Package / Case8-PowerWDFN
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
NTTFS4C25N
Environmental Information
Material Declaration NTTFS4C25NTWGonsemi REACHonsemi RoHS
PCN Obsolescence/ EOL
Mult Dev EOL 01/Oct/2021
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The NTTFS4C25NTWG is an N-Channel MOSFET manufactured by Onsemi, designed for surface mount applications. It operates with a maximum voltage of 30V and can handle current ratings of 5A when measured in ambient conditions (Ta) and up to 27A with appropriate heatsinking (Tc). The power dissipation capabilities are 690mW for ambient (Ta) and 20.2W for case temperature conditions (Tc). This device features a gate-source voltage rating of ±20V and a typical input capacitance of 500 pF at 15V. It is housed in a compact 8-WDFN package measuring 3.3x3.3mm, which makes it suitable for efficient board space utilization.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.