NTTFS4C05NTWGN-Channel 30 V 12A (Ta), 75A (Tc) 820mW (Ta), 33W (Tc) Surface Mount 8-WDFN (3.3x3.3)
1:$1.0170
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ABRmicro #.ABR2045-NTTFS4-919965
ManufacturerOnsemi
MPN #.NTTFS4C05NTWG
Estimated Lead Time-
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Datasheet
NTTFS4C05N(PDF)
NTTFS4C05N(PDF)
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Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 15, 2024
* Quantity
Unit Price$ 1.0170
Ext. Price$ 1.0170
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.0170$1.0170
10$0.8340$8.3410
100$0.6480$64.8130
500$0.5490$274.6560
1000$0.4470$447.3130
2000$0.4210$841.5000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Related Parts
Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusObsolete
Base Product NumberNTTFS4
Continuous Drain Current (ID) @ 25°C12A (Ta), 75A (Tc)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)31 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1988 pF @ 15 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation820mW (Ta), 33W (Tc)
RDS(on) Drain-to-Source On Resistance3.6mOhm @ 30A, 10V
Package Type (Mfr.)8-WDFN (3.3x3.3)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.2V @ 250µA
Package / Case8-PowerWDFN
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Datasheets
Environmental Information
PCN Assembly/Origin
PCN Obsolescence/ EOL
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The NTTFS4C05NTWG is an N-Channel MOSFET manufactured by Onsemi, designed for efficient power management and switching applications. It supports a maximum drain-source voltage of 30V and can handle a continuous current of up to 12A at ambient temperature or 75A with proper heat dissipation. This device offers a low on-resistance of 3.6 milliohms at a gate-source voltage of 10V and a drain current of 30A, which enhances its conductivity and power efficiency. Packaged in a compact surface-mountable 8-WDFN (3.3x3.3mm) format, it ensures efficient thermal management with power handling capabilities of 820mW at ambient temperature and 33W with a controlled case temperature. The MOSFET also features a threshold voltage requirement of 2.2V at a gate-source current of 250µA and can tolerate gate-source voltages up to ±20V, making it versatile for various electronic circuit designs.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.