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NTTFS4C05NTAGN-Channel 30 V 12A (Ta), 75A (Tc) 820mW (Ta), 33W (Tc) Surface Mount 8-WDFN (3.3x3.3)
1:$0.7270
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ABRmicro #.ABR2045-NTTFS4-971578
ManufacturerOnsemi
MPN #.NTTFS4C05NTAG
Estimated Lead Time18 Weeks
SampleGet Free Sample
DatasheetNTTFS4C05N(PDF)
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In Stock: 153
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 0.7270
Ext. Price$ 0.7270
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.7270$0.7270
10$0.6270$6.2690
100$0.4340$43.3500
500$0.3620$181.1560
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberNTTFS4
Continuous Drain Current (ID) @ 25°C12A (Ta), 75A (Tc)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)31 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1988 pF @ 15 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation820mW (Ta), 33W (Tc)
RDS(on) Drain-to-Source On Resistance3.6mOhm @ 30A, 10V
Package Type (Mfr.)8-WDFN (3.3x3.3)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.2V @ 250µA
Package / Case8-PowerWDFN
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Datasheets
Environmental Information
PCN Assembly/Origin
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The NTTFS4C05NTAG is an N-Channel MOSFET manufactured by Onsemi, featuring a 30 V voltage rating and capable of carrying a current of up to 12A in free air (Ta) and 75A with adequate cooling (Tc). The device is housed in a compact 8-WDFN (3.3x3.3 mm) surface-mount package, allowing for efficient board space utilization. It can dissipate power up to 820mW in open air and 33W with proper heatsinking. Its input capacitance is measured at 1988 pF at 15 V, and it exhibits threshold voltages of 4.5V and 10V, with gate-source voltage tolerance of ±20V.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.