ABR MCRO Logo
Image is for reference only, the actual product serves as the standard.
NTTFS3A08PZTWGP-Channel 20 V 9A (Ta) 840mW (Ta) Surface Mount 8-WDFN (3.3x3.3)

N/A

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-NTTFS3-940351
ManufacturerOnsemi
MPN #.NTTFS3A08PZTWG
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheetNTTFS3A08PZ(PDF)
For large-volume purchases, our unique channels enable us to provide prices that other suppliers cannot match: significantly below market rates.
Service
Guaranteed Authenticity
Technical Support
Fast Refund
Free Shipping (over $960)
Issue an Invoice
24/7 Manual Service
In Stock: 16
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 15, 2024
* Quantity
Send Inquiry
Add To RFQ List
Related Parts
BS108ZL1GN/A
Onsemi
N-Channel 200 V 250mA (Ta) 350mW (Ta) Through Hole TO-92 (TO-226)
BUH150N/A
Onsemi
Bipolar (BJT) Transistor NPN 700 V 15 A 23MHz 150 W Through Hole TO-220
FDG6301N$0.3590
Onsemi
Mosfet Array 25V 220mA 300mW Surface Mount SC-88 (SC-70-6)
FDT86106LZ$1.1630
Onsemi
N-Channel 100 V 3.2A (Ta) 2.2W (Ta) Surface Mount SOT-223-4
HUFA75337S3STN/A
Onsemi
N-Channel 55 V 75A (Tc) 175W (Tc) Surface Mount TO-263 (D2PAK)
HUFA75842S3SN/A
Onsemi
N-Channel 150 V 43A (Tc) 230W (Tc) Surface Mount TO-263 (D2PAK)
NTQD6968R2N/A
Onsemi
Mosfet Array 20V 6.6A 1.42W Surface Mount 8-TSSOP
Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberNTTFS3
Continuous Drain Current (ID) @ 25°C9A (Ta)
Drain-to-Source Voltage (VDS)20 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))2.5V, 4.5V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)56 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)5000 pF @ 10 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation840mW (Ta)
RDS(on) Drain-to-Source On Resistance6.7mOhm @ 12A, 4.5V
Package Type (Mfr.)8-WDFN (3.3x3.3)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±8V
VGS(th) Gate-to-Source Threshold Voltage (Max.)1V @ 250µA
Package / Case8-PowerWDFN
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
NTTFS3A08PZ
Environmental Information
Material Declaration NTTFS3A08PZTWGonsemi RoHS
PCN Obsolescence/ EOL
Mult Dev EOL 01/Oct/2021
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.21.0095 (Other; No import duty applies)
Additional Details
The NTTFS3A08PZTWG is a P-channel MOSFET manufactured by Onsemi. It is designed for surface mount applications and comes in an 8-WDFN package measuring 3.3x3.3 mm. This device operates with a voltage rating of 20V and can handle a continuous current of 9A, with a power dissipation of 840mW. It features a low on-resistance of 6.7mOhms at a drain current of 12A and a gate-source voltage of 4.5V, making it efficient for switching tasks. The MOSFET supports gate-source voltage operation at both 2.5V and 4.5V.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.