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NTR3C21NZT1GN-Channel 20 V 3.6A (Ta) 470mW (Ta) Surface Mount SOT-23-3 (TO-236)

1:$0.3590

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-NTR3C2-997576
ManufacturerOnsemi
MPN #.NTR3C21NZT1G
Estimated Lead Time18 Weeks
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DatasheetDatasheetNTR3C21NZ(PDF)
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In Stock: 7456
Shipped From Shenzhen or Hong Kong Warehouses
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Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 0.3590
Ext. Price$ 0.3590
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.3590$0.3590
10$0.3050$3.0490
100$0.2110$21.1440
500$0.1660$82.8750
1000$0.1350$134.9380
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberNTR3C21
Continuous Drain Current (ID) @ 25°C3.6A (Ta)
Drain-to-Source Voltage (VDS)20 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))1.8V, 4.5V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)17.8 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1540 pF @ 16 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation470mW (Ta)
RDS(on) Drain-to-Source On Resistance24mOhm @ 5A, 4.5V
Package Type (Mfr.)SOT-23-3 (TO-236)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±8V
VGS(th) Gate-to-Source Threshold Voltage (Max.)1V @ 250µA
Package / CaseTO-236-3, SC-59, SOT-23-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
NTR3C21NZ
Environmental Information
Material Declaration NTR3C21NZT1Gonsemi REACHonsemi RoHS
PCN Assembly/Origin
Mold Compound 07/Sep/2019
PCN Design/Specification
SOT23 16/Sep/2016
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.21.0095 (Other; No import duty applies)
Additional Details
The Onsemi NTR3C21NZT1G is a surface-mounted N-Channel MOSFET housed in a SOT-23-3 (TO-236) package. It is designed to handle a continuous drain current of 3.6A at 20V, with a power dissipation capacity of 470mW. The device exhibits a gate threshold voltage of 1V at a gate current of 250µA and features an input capacitance of 1540 pF at 16V. This MOSFET is suitable for compact circuitry due to its small footprint, and it provides efficient switching performance thanks to its low gate drive voltage.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.