Image is for reference only, the actual product serves as the standard.
NTR3162PT3GP-Channel 20 V 2.2A (Ta) 480mW (Ta) Surface Mount SOT-23-3 (TO-236)

N/A

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-NTR316-928949
ManufacturerOnsemi
MPN #.NTR3162PT3G
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheetNTR3162P(PDF)
For large-volume purchases, our unique channels enable us to provide prices that other suppliers cannot match: significantly below market rates.
Service
Guaranteed Authenticity
Technical Support
Fast Refund
Free Shipping (over $960)
Issue an Invoice
24/7 Manual Service
In Stock: 6
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 15, 2024
* Quantity
Send Inquiry
Add To RFQ List
Related Parts
N-Channel 200 V 250mA (Ta) 350mW (Ta) Through Hole TO-92 (TO-226)
Bipolar (BJT) Transistor NPN 700 V 15 A 23MHz 150 W Through Hole TO-220
FDG6301N$0.3590
Mosfet Array 25V 220mA 300mW Surface Mount SC-88 (SC-70-6)
FDT86106LZ$1.1630
N-Channel 100 V 3.2A (Ta) 2.2W (Ta) Surface Mount SOT-223-4
N-Channel 55 V 75A (Tc) 175W (Tc) Surface Mount TO-263 (D2PAK)
N-Channel 150 V 43A (Tc) 230W (Tc) Surface Mount TO-263 (D2PAK)
Mosfet Array 20V 6.6A 1.42W Surface Mount 8-TSSOP
Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberNTR316
Continuous Drain Current (ID) @ 25°C2.2A (Ta)
Drain-to-Source Voltage (VDS)20 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))1.5V, 4.5V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)10.3 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)940 pF @ 10 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation480mW (Ta)
RDS(on) Drain-to-Source On Resistance70mOhm @ 2.2A, 4.5V
Package Type (Mfr.)SOT-23-3 (TO-236)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±8V
VGS(th) Gate-to-Source Threshold Voltage (Max.)1V @ 250µA
Package / CaseTO-236-3, SC-59, SOT-23-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
Environmental Information
PCN Design/Specification
PCN Obsolescence/ EOL
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.21.0095 (Other; No import duty applies)
Additional Details
The NTR3162PT3G is a P-channel MOSFET manufactured by Onsemi, designed for surface mount applications. It features a drain-source voltage of 20 V and a continuous drain current of 2.2 A at a given ambient temperature rating. This MOSFET is housed in a compact SOT-23-3 (TO-236) package, offering a power dissipation capability of 480 mW. It also includes a gate-to-source voltage rating of ±8V and specifies an input capacitance of approximately 940 pF at 10 V, providing reliable performance in a small footprint.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.