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NTQS6463R2P-Channel 20 V 6.8A (Ta) 930mW (Ta) Surface Mount 8-TSSOP

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ABRmicro #.ABR2045-NTQS64-1021414
ManufacturerOnsemi
MPN #.NTQS6463R2
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheetNTQS6463(PDF)
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In Stock: 10
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 16, 2024
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberNTQS64
Continuous Drain Current (ID) @ 25°C6.8A (Ta)
Drain-to-Source Voltage (VDS)20 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))2.5V, 4.5V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)50 nC @ 5 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation930mW (Ta)
RDS(on) Drain-to-Source On Resistance20mOhm @ 6.8A, 4.5V
Package Type (Mfr.)8-TSSOP
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±12V
VGS(th) Gate-to-Source Threshold Voltage (Max.)900mV @ 250µA
Package / Case8-TSSOP (0.173", 4.40mm Width)
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Extended Links
Datasheets
NTQS6463
Environmental Information
onsemi REACHonsemi RoHS
Environmental & Export Classifications
RoHS ComplianceNot RoHS compliant and cannot enter the EU market
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.21.0095 (Other; No import duty applies)
Additional Details
The NTQS6463R2 is a surface-mount P-Channel MOSFET manufactured by ON Semiconductor, designed for efficient electrical performance in compact applications. It features a voltage rating of 20 volts and can handle currents up to 6.8 amperes with a maximum power dissipation of 930 milliwatts. The part is encased in an 8-pin TSSOP package, which aids in its integration into small-scale circuits. With a gate charge of 50 nanocoulombs at 5 volts and capability to operate at gate drive voltages of 2.5V and 4.5V, it also exhibits robustness with a tolerance of up to ±12 volts for gate-source voltage excursions.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.