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NTPF082N65S3FN-Channel 650 V 40A (Tc) 48W (Tc) Through Hole TO-220F-3

1:$3.7370

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ABRmicro #.ABR2045-NTPF08-960921
ManufacturerOnsemi
MPN #.NTPF082N65S3F
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheetNTPF082N65S3F(PDF)
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In Stock: 452
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 3.7370
Ext. Price$ 3.7370
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$3.7370$3.7370
50$2.9820$149.1220
100$2.7640$276.3560
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesSuperFET® III
Packaging
Tube
Lifecycle StatusNRND(Not Recommended for New Designs)
Base Product NumberNTPF082
Continuous Drain Current (ID) @ 25°C40A (Tc)
Drain-to-Source Voltage (VDS)650 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)70 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)3240 pF @ 400 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation48W (Tc)
RDS(on) Drain-to-Source On Resistance82mOhm @ 20A, 10V
Package Type (Mfr.)TO-220F-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 4mA
Package / CaseTO-220-3 Full Pack
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
NTPF082N65S3F
Environmental Information
Material Declaration NTPF082N65S3Fonsemi REACHonsemi RoHS
PCN Assembly/Origin
Assembly and Test Qualification 26/Jul/2023
PCN Design/Specification
SuperFet Datasheet Chg 30/Jul/2019
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL LevelNot Required
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The NTPF082N65S3F is an N-Channel MOSFET manufactured by Onsemi, designed for high voltage and current applications. It features a maximum drain-source voltage of 650 V and can handle a continuous current of 40 A at a case temperature of 25°C, with a power dissipation capability of 48 W under the same conditions. The device is housed in a TO-220F-3 package, which is suitable for through-hole mounting. With a low on-resistance of 82 milliohms at a gate-source voltage of 10 V and a drain current of 20 A, it allows for efficient operation. The MOSFET also operates with a gate threshold voltage of 5 V with a gate current of 4 mA, making it a reliable component for various electronic circuits.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.