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NTP8G202NGN-Channel 600 V 9A (Tc) 65W (Tc) Through Hole TO-220

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ABRmicro #.ABR2045-NTP8G2-967519
ManufacturerOnsemi
MPN #.NTP8G202NG
Estimated Lead Time-
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DatasheetDatasheetNTP8G202N(PDF)
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In Stock: 20
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
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Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberNTP8G2
Continuous Drain Current (ID) @ 25°C9A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))8V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)9.3 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)760 pF @ 400 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation65W (Tc)
RDS(on) Drain-to-Source On Resistance350mOhm @ 5.5A, 8V
Package Type (Mfr.)TO-220
TechnologyGaNFET (Cascode Gallium Nitride FET)
Gate-to-Source Voltage (Vɢs)±18V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.6V @ 500µA
Package / CaseTO-220-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
NTP8G202N
Environmental Information
onsemi REACHonsemi RoHS
PCN Obsolescence/ EOL
1Q2018 Product EOL 31/Mar/2018Mult Devices EOL 126/Jul/2018
Video File
GaN Transistors (Gallium Nitride)
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The NTP8G202NG from Onsemi is an N-Channel GaNFET (Cascode Gallium Nitride Field-Effect Transistor) designed for efficient power switching applications. It can handle a drain-source voltage of up to 600 V and a continuous current of 9 A under specified conditions. Encapsulated in a TO-220 through-hole package, it provides a power dissipation capacity of 65W, maximizing its thermal performance when properly mounted. The device features a drain-source on-resistance of 350 mOhm at 5.5 A and 8 V gate-source voltage, with the ability to withstand gate-source voltages up to ±18V.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.