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NTP75N06GN-Channel 60 V 75A (Ta) 2.4W (Ta), 214W (Tj) Through Hole TO-220

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ABRmicro #.ABR2045-NTP75N-988094
ManufacturerOnsemi
MPN #.NTP75N06G
Estimated Lead Time-
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In Stock: 5
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Tube
Shipping DateNovember 16, 2024
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Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberNTP75N
Continuous Drain Current (ID) @ 25°C75A (Ta)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)130 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)4510 pF @ 25 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation2.4W (Ta), 214W (Tj)
RDS(on) Drain-to-Source On Resistance9.5mOhm @ 37.5A, 10V
Package Type (Mfr.)TO-220
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-220-3
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Environmental Information
PCN Obsolescence/ EOL
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The NTP75N06G is an N-Channel MOSFET manufactured by Onsemi. It is designed to handle a maximum voltage of 60V and a continuous current of up to 75A when rated at ambient temperature. This component is housed in a TO-220 package, suitable for through-hole mounting. It features a power dissipation capacity of 2.4W at ambient temperature and 214W when considering junction temperatures. The gate threshold voltage is 4V at 250µA, and it has an input capacitance of 4510 pF at 25V. The MOSFET is also capable of withstanding gate-source voltages up to ±20V, offering robustness in varied electrical environments.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.