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NTP75N03-6GN-Channel 30 V 75A (Tc) 2.5W (Ta), 125W (Tc) Through Hole TO-220

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ABRmicro #.ABR2045-NTP75N-992581
ManufacturerOnsemi
MPN #.NTP75N03-6G
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheetNTB,NTP75N03-06(PDF)
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In Stock: 3
Shipped From Shenzhen or Hong Kong Warehouses
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Packaging
Tube
Shipping DateNovember 16, 2024
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Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberNTP75N
Continuous Drain Current (ID) @ 25°C75A (Tc)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)75 nC @ 5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)5635 pF @ 25 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation2.5W (Ta), 125W (Tc)
RDS(on) Drain-to-Source On Resistance6.5mOhm @ 37.5A, 10V
Package Type (Mfr.)TO-220
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2V @ 250µA
Package / CaseTO-220-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
NTB,NTP75N03-06
Environmental Information
onsemi REACHonsemi RoHS
PCN Obsolescence/ EOL
Multiple Devices 03/Apr/2007
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The NTP75N03-6G is an N-Channel MOSFET manufactured by Onsemi, featuring a 30V maximum drain-source voltage and a continuous drain current capacity of 75A at a case temperature (Tc). The component is designed for efficient power handling, dissipating up to 2.5W at ambient temperature (Ta) and 125W at the case. Packaged in a TO-220 through-hole configuration, it offers a gate charge of 75 nC at a 5V gate-source voltage, with a gate-source voltage rating of ±20V. This solid-state device is designed for efficient switching and conduction due to its metal-oxide semiconductor structure.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.