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NTP6448ANGN-Channel 100 V 80A (Tc) Through Hole TO-220

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ABRmicro #.ABR2045-NTP644-912951
ManufacturerOnsemi
MPN #.NTP6448ANG
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheetNTB,P6448AN(PDF)
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In Stock: 10
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 13, 2024
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Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberNTP644
Continuous Drain Current (ID) @ 25°C80A (Tc)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)120 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)4500 pF @ 25 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-
Maximum Power Dissipation-
RDS(on) Drain-to-Source On Resistance13mOhm @ 76A, 10V
Package Type (Mfr.)TO-220
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-220-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
NTB,P6448AN
Environmental Information
onsemi REACHonsemi RoHS
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)