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NTP60N06N-Channel 60 V 60A (Ta) 2.4W (Ta), 150W (Tj) Through Hole TO-220

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ABRmicro #.ABR2045-NTP60N-1000103
ManufacturerOnsemi
MPN #.NTP60N06
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheetNTP, NTB60N06(PDF)
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In Stock: 14
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
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Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberNTP60N
Continuous Drain Current (ID) @ 25°C60A (Ta)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)81 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)3220 pF @ 25 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation2.4W (Ta), 150W (Tj)
RDS(on) Drain-to-Source On Resistance14mOhm @ 30A, 10V
Package Type (Mfr.)TO-220
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-220-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
NTP, NTB60N06
Environmental Information
onsemi REACHonsemi RoHS
PCN Obsolescence/ EOL
Multiple Devices 03/Jan/2008
Environmental & Export Classifications
RoHS ComplianceNot RoHS compliant and cannot enter the EU market
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The NTP60N06 is an N-Channel MOSFET manufactured by Onsemi. It is designed to handle a maximum voltage of 60 volts and a continuous current of up to 60 amperes. The device is capable of dissipating up to 2.4 watts in a standard ambient temperature (Ta) environment and up to 150 watts at the junction level (Tj), making it suitable for moderate power applications. Housed in a TO-220 through-hole package, this MOSFET features a gate-to-source threshold voltage of 4 volts at 250 microamperes and operates efficiently with a gate charge at a drive voltage of 10 volts. Additionally, the input capacitance measures 3220 pF at 25 volts, contributing to its switching characteristics.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.