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NTP4813NLGN-Channel 30 V 10.2A (Ta) 2.4W (Ta), 60W (Tc) Through Hole TO-220-3

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ABRmicro #.ABR2045-NTP481-1020594
ManufacturerOnsemi
MPN #.NTP4813NLG
Estimated Lead Time-
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DatasheetDatasheetNTP4813NL(PDF)
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Shipping DateNovember 16, 2024
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Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusActive
Base Product NumberNTP4813
Continuous Drain Current (ID) @ 25°C10.2A (Ta)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)17 nC @ 11.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)895 pF @ 12 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation2.4W (Ta), 60W (Tc)
RDS(on) Drain-to-Source On Resistance13.1mOhm @ 20A, 10V
Package Type (Mfr.)TO-220-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.5V @ 250µA
Package / CaseTO-220-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
NTP4813NL
Environmental Information
Material Declaration NTP4813NLGonsemi RoHS
PCN Design/Specification
TO-220 Case Outline Update 18/Sep/2014
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The NTP4813NLG is an N-channel MOSFET manufactured by Onsemi, housed in a TO-220-3 through-hole package. It is designed for moderately high power applications and features a 30V maximum drain-source voltage. The component can handle a continuous drain current of up to 10.2A at room temperature and dissipates power at rates of 2.4W under ambient conditions (Ta) and 60W when mounted on a proper heat sink (Tc). This MOSFET operates with a gate-source voltage range of ±20V and has threshold voltages of 4.5V and 10V, suitable for efficient switching in various circuit designs.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.