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NTP45N06LN-Channel 60 V 45A (Ta) 2.4W (Ta), 125W (Tj) Through Hole TO-220
N/A
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ABRmicro #.ABR2045-NTP45N-991361
ManufacturerOnsemi
MPN #.NTP45N06L
Estimated Lead Time-
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DatasheetNTP, NTB45N06L(PDF)
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Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberNTP45N
Continuous Drain Current (ID) @ 25°C45A (Ta)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))5V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)32 nC @ 5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1700 pF @ 25 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation2.4W (Ta), 125W (Tj)
RDS(on) Drain-to-Source On Resistance28mOhm @ 22.5A, 5V
Package Type (Mfr.)TO-220
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±15V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2V @ 250µA
Package / CaseTO-220-3
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Datasheets
Environmental Information
PCN Obsolescence/ EOL
Environmental & Export Classifications
RoHS ComplianceNot RoHS compliant and cannot enter the EU market
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The NTP45N06L, manufactured by Onsemi, is an N-Channel MOSFET designed for efficient power handling and switching applications. It operates at a maximum voltage of 60V and can handle a continuous current of up to 45A when properly mounted. With a thermal power dissipation of 2.4W at the ambient temperature (Ta) and 125W at the junction temperature (Tj), it is housed in a robust TO-220 through-hole package. The device features a total gate charge of 32 nC at 5 V and can withstand gate-source voltages up to ±15V. It offers low on-resistance, measured at 28mOhm with a drain current of 22.5A and a gate-source voltage of 5V, ensuring minimal power loss during operation.
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