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NTMYS3D5N04CTWGN-Channel 40 V 24A (Ta), 102A (Tc) 3.6W (Ta), 68W (Tc) Surface Mount LFPAK4 (5x6)

1:$1.8210

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-NTMYS3-1014005
ManufacturerOnsemi
MPN #.NTMYS3D5N04CTWG
Estimated Lead Time14 Weeks
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DatasheetDatasheetNTMYS3D5N04C(PDF)
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In Stock: 2100
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 1.8210
Ext. Price$ 1.8210
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.8210$1.8210
10$1.5110$15.1090
100$1.2020$120.1690
500$1.0170$508.4060
1000$0.8630$862.7500
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberNTMYS3
Continuous Drain Current (ID) @ 25°C24A (Ta), 102A (Tc)
Drain-to-Source Voltage (VDS)40 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)23 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1600 pF @ 25 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation3.6W (Ta), 68W (Tc)
RDS(on) Drain-to-Source On Resistance3.3mOhm @ 50A, 10V
Package Type (Mfr.)LFPAK4 (5x6)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3.5V @ 60µA
Package / CaseSOT-1023, 4-LFPAK
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
NTMYS3D5N04C
Environmental Information
Material Declaration NTMYS3D5N04CTWGonsemi REACHonsemi RoHS
PCN Assembly/Origin
Wafer Fab Change 17/Oct/2022
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The NTMYS3D5N04CTWG from Onsemi is an N-Channel MOSFET designed for high efficiency in power management applications. It features a maximum voltage rating of 40V and can handle currents up to 24A in ambient temperature conditions and 102A with proper thermal management. With a maximum power dissipation of 3.6W at ambient temperature and 68W with adequate heat sinking, this MOSFET is housed in a surface-mount LFPAK4 package measuring 5x6mm. The component exhibits low on-resistance, measuring 3.3mOhm at 50A and 10V, ensuring minimal energy loss and heat generation in operation. Additionally, it has a gate charge of 23 nC at 10V, facilitating fast switching capabilities.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.