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NTMYS2D4N04CTWGN-Channel 40 V 30A (Ta), 138A (Tc) 3.9W (Ta), 83W (Tc) Surface Mount LFPAK4 (5x6)

1:$1.9670

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-NTMYS2-1011781
ManufacturerOnsemi
MPN #.NTMYS2D4N04CTWG
Estimated Lead Time14 Weeks
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DatasheetDatasheetNTMYS2D4N04C(PDF)
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In Stock: 1995
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 1.9670
Ext. Price$ 1.9670
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.9670$1.9670
10$1.6320$16.3200
100$1.2990$129.9440
500$1.1000$549.8440
1000$0.9330$932.8750
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberNTMYS2
Continuous Drain Current (ID) @ 25°C30A (Ta), 138A (Tc)
Drain-to-Source Voltage (VDS)40 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)32 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2100 pF @ 25 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation3.9W (Ta), 83W (Tc)
RDS(on) Drain-to-Source On Resistance2.3mOhm @ 50A, 10V
Package Type (Mfr.)LFPAK4 (5x6)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3.5V @ 90µA
Package / CaseSOT-1023, 4-LFPAK
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
NTMYS2D4N04C
Environmental Information
onsemi RoHS
PCN Assembly/Origin
Wafer Fab Change 17/Oct/2022
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The NTMYS2D4N04CTWG by Onsemi is an N-Channel MOSFET designed for surface mount applications, housed in a compact LFPAK4 (5x6) package. It is capable of handling up to 40V, with a continuous current rating of 30A at ambient temperature (Ta) and a significantly higher current capacity of 138A at case temperature (Tc). The power dissipation is rated at 3.9W for Ta and 83W for Tc, making it suitable for applications requiring substantial power handling within the specified ranges. It features a very low on-resistance of 2.3mOhm at 50A and 10V, contributing to its efficiency in conducting current with minimal power loss.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.