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NTMSD3P102R2GP-Channel 20 V 2.34A (Ta) 730mW (Ta) Surface Mount 8-SOIC
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ABRmicro #.ABR2045-NTMSD3-956253
ManufacturerOnsemi
MPN #.NTMSD3P102R2G
Estimated Lead Time-
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DatasheetNTMSD3P102R2(PDF)
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Technical Specifications
SeriesFETKY™
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberNTMSD3
Continuous Drain Current (ID) @ 25°C2.34A (Ta)
Drain-to-Source Voltage (VDS)20 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET FeatureSchottky Diode (Isolated)
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)25 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)750 pF @ 16 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation730mW (Ta)
RDS(on) Drain-to-Source On Resistance85mOhm @ 3.05A, 10V
Package Type (Mfr.)8-SOIC
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.5V @ 250µA
Package / Case8-SOIC (0.154", 3.90mm Width)
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PCN Design/Specification
Environmental & Export Classifications
MSL Level3 (168 Hours, ≤ 30°C/60% RH), Vacuum Sealing
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.21.0095 (Other; No import duty applies)
Additional Details
The NTMSD3P102R2G, manufactured by Onsemi, is a P-Channel MOSFET designed for surface mount applications, housed in an 8-SOIC package. It operates with a maximum voltage of 20 V and can handle a current of up to 2.34A with a power dissipation of 730mW, both measured under specific conditions (Ta). This component includes a Schottky diode which is isolated, providing a capacitance of 750 pF at 16 V. Additionally, it features a total gate charge of 25 nC when driven at 10 V, making it a suitable choice for applications requiring efficient switching performance.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.