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NTMS5P02R2GP-Channel 20 V 3.95A (Ta) 790mW (Ta) Surface Mount 8-SOIC

1:$0.7520

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-NTMS5P-941593
ManufacturerOnsemi
MPN #.NTMS5P02R2G
Estimated Lead Time19 Weeks
SampleGet Free Sample
DatasheetDatasheetNTMS5P02R2(PDF)
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In Stock: 818
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 0.7520
Ext. Price$ 0.7520
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.7520$0.7520
10$0.6190$6.1940
100$0.4810$48.1310
500$0.4080$204.0000
1000$0.3330$332.5630
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberNTMS5
Continuous Drain Current (ID) @ 25°C3.95A (Ta)
Drain-to-Source Voltage (VDS)20 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))2.5V, 4.5V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)35 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1900 pF @ 16 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation790mW (Ta)
RDS(on) Drain-to-Source On Resistance33mOhm @ 5.4A, 4.5V
Package Type (Mfr.)8-SOIC
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±10V
VGS(th) Gate-to-Source Threshold Voltage (Max.)1.25V @ 250µA
Package / Case8-SOIC (0.154", 3.90mm Width)
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
NTMS5P02R2
Environmental Information
Material Declaration NTMS5P02R2Gonsemi REACHonsemi RoHS
PCN Design/Specification
Multiple Devices Copper Wire 20/Aug/2008
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.21.0095 (Other; No import duty applies)
Additional Details
The NTMS5P02R2G is a P-channel MOSFET manufactured by Onsemi, designed for surface mount applications with an 8-SOIC package. It is capable of operating with a voltage of up to 20V and can handle a continuous current of 3.95A at standard ambient temperature conditions, dissipating up to 790mW. The part features a gate-source threshold voltage of ±10V and an input capacitance characterized by a charge of 35 nC at 4.5V, while exhibiting a gate threshold voltage of 1.25V at a gate-source test current of 250µA.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.