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NTMS4706NR2GN-Channel 30 V 6.4A (Ta) 830mW (Ta) Surface Mount 8-SOIC

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ABRmicro #.ABR2045-NTMS47-956140
ManufacturerOnsemi
MPN #.NTMS4706NR2G
Estimated Lead Time-
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In Stock: 15
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 16, 2024
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberNTMS47
Continuous Drain Current (ID) @ 25°C6.4A (Ta)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)15 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)950 pF @ 24 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation830mW (Ta)
RDS(on) Drain-to-Source On Resistance12mOhm @ 10.3A, 10V
Package Type (Mfr.)8-SOIC
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.5V @ 250µA
Package / Case8-SOIC (0.154", 3.90mm Width)
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Environmental Information
PCN Obsolescence/ EOL
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.21.0095 (Other; No import duty applies)
Additional Details
The NTMS4706NR2G is an N-Channel MOSFET manufactured by Onsemi, designed for effective switching and amplification tasks. It operates at a voltage of 30V, supporting a continuous current of 6.4A when mounted on a standard surface and dissipating up to 830mW of power. Packaged in a compact 8-SOIC surface-mount configuration, this MOSFET ensures efficient space utilization on circuit boards. Capable of handling gate-source voltages of up to ±20V, it functions optimally at threshold voltages of 4.5V and 10V. This component is suitable for integration into various electronic devices requiring reliable and efficient voltage regulation and control.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.