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NTMS4706NR2GN-Channel 30 V 6.4A (Ta) 830mW (Ta) Surface Mount 8-SOIC
N/A
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ABRmicro #.ABR2045-NTMS47-956140
ManufacturerOnsemi
MPN #.NTMS4706NR2G
Estimated Lead Time-
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DatasheetNTMS4706N(PDF)
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberNTMS47
Continuous Drain Current (ID) @ 25°C6.4A (Ta)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)15 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)950 pF @ 24 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation830mW (Ta)
RDS(on) Drain-to-Source On Resistance12mOhm @ 10.3A, 10V
Package Type (Mfr.)8-SOIC
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.5V @ 250µA
Package / Case8-SOIC (0.154", 3.90mm Width)
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Datasheets
Environmental Information
PCN Obsolescence/ EOL
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.21.0095 (Other; No import duty applies)
Additional Details
The NTMS4706NR2G is an N-Channel MOSFET manufactured by Onsemi, designed for effective switching and amplification tasks. It operates at a voltage of 30V, supporting a continuous current of 6.4A when mounted on a standard surface and dissipating up to 830mW of power. Packaged in a compact 8-SOIC surface-mount configuration, this MOSFET ensures efficient space utilization on circuit boards. Capable of handling gate-source voltages of up to ±20V, it functions optimally at threshold voltages of 4.5V and 10V. This component is suitable for integration into various electronic devices requiring reliable and efficient voltage regulation and control.
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