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NTMS4503NR2N-Channel 28 V 9A (Ta) 930mW (Ta) Surface Mount 8-SOIC

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ABRmicro #.ABR2045-NTMS45-941820
ManufacturerOnsemi
MPN #.NTMS4503NR2
Estimated Lead Time-
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DatasheetDatasheetNTMS4503N(PDF)
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In Stock: 16
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 16, 2024
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberNTMS45
Continuous Drain Current (ID) @ 25°C9A (Ta)
Drain-to-Source Voltage (VDS)28 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)23 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2400 pF @ 16 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation930mW (Ta)
RDS(on) Drain-to-Source On Resistance8mOhm @ 14A, 10V
Package Type (Mfr.)8-SOIC
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2V @ 250µA
Package / Case8-SOIC (0.154", 3.90mm Width)
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
NTMS4503N
Environmental Information
onsemi REACHonsemi RoHS
PCN Design/Specification
Multiple Devices Copper Wire 20/Aug/2008
PCN Obsolescence/ EOL
Multiple Devices 20/Aug/2008
Environmental & Export Classifications
RoHS ComplianceNot RoHS compliant and cannot enter the EU market
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.21.0095 (Other; No import duty applies)
Additional Details
The NTMS4503NR2 by Onsemi is an N-Channel MOSFET designed for efficient control and switching operations. It operates with a maximum drain-source voltage of 28 V and can handle a continuous drain current of 9A at ambient temperature conditions (Ta). This component is encapsulated in a compact 8-SOIC surface mount package, providing a power dissipation capability of 930mW. It features a low on-state resistance of 8 milliohms when driven at a gate-source voltage of 10V and a drain current of 14A. Additionally, it has a gate threshold voltage of 2V at a gate current of 250µA and a total gate charge of 23 nC when operated at 4.5V, making it suitable for various applications requiring efficient switching.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.