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NTMS10P02R2GP-Channel 20 V 8.8A (Ta) 1.6W (Ta) Surface Mount 8-SOIC

1:$1.3690

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-NTMS10-944013
ManufacturerOnsemi
MPN #.NTMS10P02R2G
Estimated Lead Time19 Weeks
SampleGet Free Sample
DatasheetDatasheetNTMS10P02R2(PDF)
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In Stock: 3577
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 1.3690
Ext. Price$ 1.3690
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.3690$1.3690
10$1.1350$11.3480
100$0.9030$90.3130
500$0.7650$382.5000
1000$0.6490$649.1880
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberNTMS10
Continuous Drain Current (ID) @ 25°C8.8A (Ta)
Drain-to-Source Voltage (VDS)20 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))2.5V, 4.5V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)70 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)3640 pF @ 16 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation1.6W (Ta)
RDS(on) Drain-to-Source On Resistance14mOhm @ 10A, 4.5V
Package Type (Mfr.)8-SOIC
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±12V
VGS(th) Gate-to-Source Threshold Voltage (Max.)1.2V @ 250µA
Package / Case8-SOIC (0.154", 3.90mm Width)
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
NTMS10P02R2
Environmental Information
Material Declaration NTMS10P02R2Gonsemi RoHS
PCN Design/Specification
Multiple Devices Copper Wire 20/Aug/2008
PCN Packaging
Mult MSL1 Pkg Chg 20/Dec/2018
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The NTMS10P02R2G is a P-Channel MOSFET manufactured by Onsemi, designed for surface mount applications. With a voltage rating of 20 V and a current capability of 8.8A (when considering thermal limitations at ambient temperature, Ta), it provides a maximum power dissipation of 1.6W in the same conditions. Encased in an 8-SOIC package, this component features a gate charge of 70 nC at 4.5 V, allowing for efficient switching. It also has a gate-to-source voltage tolerance of ±12V, ensuring reliability in various circuit designs.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.