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NTMFS5H615NLT1GN-Channel 60 V 28A (Ta), 185A (Tc) 3.2W (Ta), 139W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
1:$2.0420
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ABRmicro #.ABR2045-NTMFS5-977731
ManufacturerOnsemi
MPN #.NTMFS5H615NLT1G
Estimated Lead Time37 Weeks
SampleGet Free Sample
DatasheetNTMFS5H615NL(PDF)
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In Stock: 835
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 2.0420
Ext. Price$ 2.0420
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$2.0420$2.0420
10$1.6940$16.9360
100$1.3480$134.8310
500$1.1410$570.5630
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberNTMFS5
Continuous Drain Current (ID) @ 25°C28A (Ta), 185A (Tc)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)63 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)4860 pF @ 30 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation3.2W (Ta), 139W (Tc)
RDS(on) Drain-to-Source On Resistance1.8mOhm @ 49A, 10V
Package Type (Mfr.)5-DFN (5x6) (8-SOFL)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2V @ 250µA
Package / Case8-PowerTDFN, 5 Leads
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Datasheets
Environmental Information
PCN Assembly/Origin
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The NTMFS5H615NLT1G from Onsemi is an N-Channel MOSFET designed for surface mount applications, featuring a 5-DFN (5x6) package. It operates with a maximum drain-source voltage of 60V and supports a continuous current of 28A when measured under specific conditions on the thermal pad (Ta) and up to 185A under case conditions (Tc). It has a power dissipation capability of 3.2W in free air (Ta) and 139W on a larger thermal medium (Tc). The device offers a low threshold voltage of 2V at 250µA, a relatively low gate charge of 63 nC at 10V, and a capacitance of 4860 pF at 30V, making it suitable for efficient switching operations.
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