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NTMFS5C670NLT1GN-Channel 60 V 17A (Ta), 71A (Tc) 3.6W (Ta), 61W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)

1:$0.7690

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-NTMFS5-990432
ManufacturerOnsemi
MPN #.NTMFS5C670NLT1G
Estimated Lead Time10 Weeks
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In Stock: 16158
Shipped From Shenzhen or Hong Kong Warehouses
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Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 0.7690
Ext. Price$ 0.7690
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.7690$0.7690
10$0.6300$6.3010
100$0.4900$48.9810
500$0.4150$207.7190
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberNTMFS5
Continuous Drain Current (ID) @ 25°C17A (Ta), 71A (Tc)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)20 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1400 pF @ 25 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation3.6W (Ta), 61W (Tc)
RDS(on) Drain-to-Source On Resistance6.1mOhm @ 35A, 10V
Package Type (Mfr.)5-DFN (5x6) (8-SOFL)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2V @ 250µA
Package / Case8-PowerTDFN, 5 Leads
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The NTMFS5C670NLT1G is an N-channel MOSFET manufactured by Onsemi, featuring a maximum voltage rating of 60V and a current rating of 17A under ambient conditions (Ta) and up to 71A when mounted on a temperature-controlled case (Tc). It offers a low on-state resistance of 6.1 mOhms at 35A with a gate voltage of 10V, ensuring efficient conductivity. The device's maximum power dissipation is 3.6W in free air (Ta) and 61W when cooled (Tc), allowing for efficient thermal management. It is housed in a surface-mount 5-DFN (5x6) package, also referred to as an 8-SOFL, and can handle gate-source voltages of ±20V, making it suitable for general-purpose switching applications.
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