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NTMFS5C468NLT1GN-Channel 40 V 37A (Tc) 3.5W (Ta), 28W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
1:$0.4870
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ABRmicro #.ABR2045-NTMFS5-961907
ManufacturerOnsemi
MPN #.NTMFS5C468NLT1G
Estimated Lead Time29 Weeks
SampleGet Free Sample
DatasheetNTMFS5C468NL(PDF)
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In Stock: 1226
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 0.4870
Ext. Price$ 0.4870
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.4870$0.4870
10$0.4240$4.2390
100$0.2930$29.3250
500$0.2450$122.7190
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberNTMFS5
Continuous Drain Current (ID) @ 25°C37A (Tc)
Drain-to-Source Voltage (VDS)40 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)7.3 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)570 pF @ 20 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation3.5W (Ta), 28W (Tc)
RDS(on) Drain-to-Source On Resistance10.3mOhm @ 20A, 10V
Package Type (Mfr.)5-DFN (5x6) (8-SOFL)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2V @ 250µA
Package / Case8-PowerTDFN, 5 Leads
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Datasheets
Environmental Information
PCN Assembly/Origin
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The NTMFS5C468NLT1G is a surface mount N-Channel MOSFET manufactured by Onsemi, designed to handle a maximum voltage of 40V and a current of 37A at a case temperature (Tc). It features a low on-resistance of 10.3 milliohms at 20A with a gate-source voltage of 10V, making it efficient for switching applications. This MOSFET is housed in a compact 5-DFN (5x6) package, allowing for effective thermal performance with a power dissipation of 3.5W in free air and up to 28W with proper case conditions. Its gate threshold voltage is specified between 4.5V and 10V, indicating the range required for its activation.
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