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NTMFS5C404NLTWFT1GN-Channel 40 V 370A (Tc) 3.9W (Ta), 200W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)

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ABRmicro #.ABR2045-NTMFS5-967140
ManufacturerOnsemi
MPN #.NTMFS5C404NLTWFT1G
Estimated Lead Time-
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DatasheetDatasheetNTMFS5C404NLT(PDF)
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In Stock: 14
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 16, 2024
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberNTMFS5
Continuous Drain Current (ID) @ 25°C370A (Tc)
Drain-to-Source Voltage (VDS)40 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)181 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)12168 pF @ 25 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation3.9W (Ta), 200W (Tc)
RDS(on) Drain-to-Source On Resistance0.75mOhm @ 50A, 10V
Package Type (Mfr.)5-DFN (5x6) (8-SOFL)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2V @ 250µA
Package / Case8-PowerTDFN, 5 Leads
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
NTMFS5C404NLT
Environmental Information
Material Declaration NTMFS5C404NLTWFT1Gonsemi REACHonsemi RoHS
PCN Design/Specification
Mult Dev DS Chg 6/May/2021
PCN Obsolescence/ EOL
Obsolete Notice 30/Jun/2022
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The NTMFS5C404NLTWFT1G is an N-Channel MOSFET manufactured by Onsemi, featuring a voltage rating of 40V and a continuous drain current of 370A when measured at a case temperature (Tc). The part is designed for surface mounting, housed in a 5-DFN package measuring 5x6, commonly referred to as 8-SOFL. It exhibits a maximum power dissipation capability of 3.9W when assessed in open air (Ta) and 200W under controlled case temperature conditions. The gate charge is specified at 181 nC with a gate-to-source voltage of 10V, and it can withstand gate voltages up to ±20V, making it suitable for operations at both 4.5V and 10V.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.